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Strain effects on refractive index and confinement factor of In x Ga (1−x )As laser diodes
Author(s) -
GhafouriShiraz H.,
Tsuji S.
Publication year - 1994
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650070309
Subject(s) - diode , refractive index , materials science , laser , optics , strain (injury) , optoelectronics , band gap , active layer , laser diode , layer (electronics) , physics , nanotechnology , medicine , thin film transistor
The effects of strain upon the bandgap energy, the refractive index, and the confinement factor of a SCH laser diode with In x Ga (1−x )As as its active layer have been investigated. © 1994 John Wiley & Sons, Inc.