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Theoretical calculation of optical gain and threshold current density in strained in 1−X Ga x As/InP quantum‐well lasers using strain‐dependent conduction‐band and valence‐band structures (invited paper)
Author(s) -
Sugawara Mitsuru,
Yamazaki Susumu
Publication year - 1994
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650070308
Subject(s) - quantum well , valence (chemistry) , laser , materials science , conduction band , current density , thermal conduction , optoelectronics , valence band , condensed matter physics , band gap , chemistry , optics , physics , composite material , quantum mechanics , electron , organic chemistry
We theoretically calculate the optical gain of In 1− x Ga x As/InGaAsP strained quantum wells on (001) InP substrates based on strain‐dependent conduction‐band and valence‐band structures. Using the calculated gain, we estimate threshold current density of the strained quantum‐well lasers. We show that both biaxial compressive and tensile strains can lower the threshold current density by ½–⅓, and clarijv the mechanism for the reduction. © 1994 John Wiley & Sons. Inc.