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Flip‐chip lnAlAs/lnGaAs superlattice avalanche photodiodes with back‐illuminated structures
Author(s) -
Hanatani Shoichi,
Nakamura Hitoshi,
Tanaka Shigehisa,
Ido Tatemi,
Notsu Chiaki
Publication year - 1994
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650070307
Subject(s) - avalanche photodiode , optoelectronics , superlattice , wavelength , photodiode , dark current , bandwidth (computing) , materials science , optics , physics , photodetector , telecommunications , engineering , detector
A transparent InAlAs/InGaAs superlattice (SL) multiplication layer at a wavelength of 1.55 μm was realized by using quantum‐size effect. Using this SL, flip‐chip separate absorption and multiplication InAlAs/InGaAs SL avalanche photodiodes with back‐illuminated structures were demonstrated. A dark current lower than 2 μA at a multiplication factor of 10, a large gain‐bandwidth product of 110 GHz, and a wide bandwidth of 12 GHz were obtained at the wavelength of 1.55 μM. © 1994 John Wiley & Sons. Inc.