Flip‐chip lnAlAs/lnGaAs superlattice avalanche photodiodes with back‐illuminated structures | Zendy

Hanatani Shoichi | Zendy; Nakamura Hitoshi | Zendy; Tanaka Shigehisa | Zendy; Ido Tatemi | Zendy; Notsu Chiaki | Zendy

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Flip‐chip lnAlAs/lnGaAs superlattice avalanche photodiodes with back‐illuminated structures

Author(s) -

Hanatani Shoichi,

Nakamura Hitoshi,

Tanaka Shigehisa,

Ido Tatemi,

Notsu Chiaki

Publication year - 1994

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.4650070307

Subject(s) - avalanche photodiode , optoelectronics , superlattice , wavelength , photodiode , dark current , bandwidth (computing) , materials science , optics , physics , photodetector , telecommunications , engineering , detector

A transparent InAlAs/InGaAs superlattice (SL) multiplication layer at a wavelength of 1.55 μm was realized by using quantum‐size effect. Using this SL, flip‐chip separate absorption and multiplication InAlAs/InGaAs SL avalanche photodiodes with back‐illuminated structures were demonstrated. A dark current lower than 2 μA at a multiplication factor of 10, a large gain‐bandwidth product of 110 GHz, and a wide bandwidth of 12 GHz were obtained at the wavelength of 1.55 μM. © 1994 John Wiley & Sons. Inc.

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