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Pulsed I‐V characterization and noise measurements for an accurate hbt large‐signal model
Author(s) -
Dlenot JeanMarc,
Plana Robert,
Gayral Michel,
Graffeull Jacques
Publication year - 1994
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650070215
Subject(s) - heterojunction bipolar transistor , signal (programming language) , noise (video) , power (physics) , electronic engineering , topology (electrical circuits) , physics , electrical engineering , materials science , optoelectronics , engineering , computer science , transistor , voltage , bipolar junction transistor , quantum mechanics , artificial intelligence , image (mathematics) , programming language
The various model parameters involved in an HBT large‐signal model based on the Ebers‐Moll topology have been extracted from noise measurements, pulsed I‐V characterizations, and S‐parameter measurements. Using this model a good correlation has been established between the estimated and measured output power variations versus the input power of a GaAlAs/GaAs HBT. © 1994 John Wiley & Sons, Inc.