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The variation of short‐gate‐length gaas mesfet intrinsic noise parameters with BIAS
Author(s) -
Greaves S. D.,
Unwin R. T.
Publication year - 1993
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650061608
Subject(s) - mesfet , dependency (uml) , noise (video) , optoelectronics , electronic engineering , physics , materials science , electrical engineering , computer science , engineering , transistor , field effect transistor , voltage , artificial intelligence , image (mathematics) , software engineering
The use of intrinsic noise parameters P, R, and C to describe the noise mechanisms present in short‐gate‐length GaAs MESFETs is well established. These parameters are, however, bias dependent, and as yet no analytic solution is available that can accurately predict this dependency. Here results are presented that show the evolution of these parameters with drain current for three practical devices.