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High‐temperature superconductor/III‐V hybrid microwave circuits (invited paper)
Author(s) -
Shen ZY.,
Wilker C.,
Pang P. S. W.,
Carter C. F.,
Nguyen V. X.,
Laubacher D. B.
Publication year - 1993
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650061305
Subject(s) - microwave , electronic circuit , amplifier , electrical engineering , materials science , optoelectronics , electronic engineering , engineering , cmos , telecommunications
The electrical parameters of III‐V semiconductor devices were measured at cryogenic temperatures. These data were used for the accurate design of high‐temperature superconductor (HTS)III‐V hybrid microwave circuits. A number of such hybrid circuits, including amplifiers, oscillators, balanced mixers, and a dual channel receiver front end were designed and fabricated. Some of the test data for these circuits are presented. © 1993 John Wiley & Sons, Inc.