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A direct optically injection‐locked 2.6‐GHz HBT oscillator
Author(s) -
Karakuguk M.,
Li W. Q.,
Freeman P. N.,
East J. R.,
Haddad G. I.,
Bhattacharya P. K.
Publication year - 1993
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650061015
Subject(s) - heterojunction bipolar transistor , optoelectronics , bipolar junction transistor , injection locking , materials science , range (aeronautics) , transistor , physics , electrical engineering , optics , voltage , engineering , laser , composite material
Measurements on direct optical injection locking of GaAs/Al 0.2 Ga 0.8 As heterojunction bipolar transistor oscillators at 2.65 GHz are reported. An oscillator locking range of nearly 6 MHz has been achieved. Optical tuning by dc light is also observed with a tuning range up to 5 MHz. © 1993 John Wiley & Sons, Inc.