A direct optically injection‐locked 2.6‐GHz HBT oscillator | Zendy

Karakuguk M. | Zendy; Li W. Q. | Zendy; Freeman P. N. | Zendy; East J. R. | Zendy; Haddad G. I. | Zendy; Bhattacharya P. K. | Zendy

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A direct optically injection‐locked 2.6‐GHz HBT oscillator

Author(s) -

Karakuguk M.,

Li W. Q.,

Freeman P. N.,

East J. R.,

Haddad G. I.,

Bhattacharya P. K.

Publication year - 1993

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.4650061015

Subject(s) - heterojunction bipolar transistor , optoelectronics , bipolar junction transistor , injection locking , materials science , range (aeronautics) , transistor , physics , electrical engineering , optics , voltage , engineering , laser , composite material

Measurements on direct optical injection locking of GaAs/Al 0.2 Ga 0.8 As heterojunction bipolar transistor oscillators at 2.65 GHz are reported. An oscillator locking range of nearly 6 MHz has been achieved. Optical tuning by dc light is also observed with a tuning range up to 5 MHz. © 1993 John Wiley & Sons, Inc.

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