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A hybrid gauss‐newton‐simulated annealing optimizer for extraction of mesfet equivalent circuit elements
Author(s) -
Leong M. S.,
Kooi P. S.,
Yeo T. S.,
Ooi B. L.
Publication year - 1993
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650060804
Subject(s) - simulated annealing , equivalent circuit , mesfet , scattering parameters , electrical impedance , algorithm , mathematics , electronic engineering , mathematical optimization , computer science , engineering , voltage , transistor , electrical engineering , field effect transistor
A new optimizer is presented for the extraction of the small‐signal equivalent circuit elements (X) of a CaAs FET from its measured scattering (S) parameters. The approach is a combination of the damped Gauss‐Newton method, for the least‐squares fitting of the S parameters, and the random search generalized simulated annealing (GSA). Novel features of the proposed approach include (i) an improved Kondoh step‐by‐step optimization of the objective functions grouped according to their sensitivity to variation of key equivalent circuit parameters (X), and (ii) exploitation of the advantages derived from a transformation of the objective functions from scattering parameters to impedance parameters. © 1993 John Wiley & Sons, Inc.