Premium
Thermal resistance of 1.3μm InGaAsP vertical cavity lasers
Author(s) -
Shimizu M.,
Babić D. I.,
Dudley J. J.,
Jiang W. B.,
Bowers J. E.
Publication year - 1993
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650060802
Subject(s) - laser , materials science , optoelectronics , thermal resistance , thermal , optics , wavelength , semiconductor laser theory , atmospheric temperature range , physics , meteorology
The thermal resistance of 1.3μm InGaAsP vertical cavity lasers is calculated using the finite difference method in cylindrical coordinates. Three etched‐well laser structures are compared and the thermal resistance is calculated for a range of active area diameters and a typical cavity size. Using an InP regrown laser structure appears to be most promising for achieving room‐temperature continuous operation of long‐wavelength vertical cavity lasers. © 1993 John Wiley & Sons, Inc.