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Performance study of the reactively loaded power amplifier by transmission line modeling (TLM) with exponential switching resistance (ESR)
Author(s) -
ChiWai Cheung,
YuOn Yam
Publication year - 1993
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650060216
Subject(s) - transmission line , equivalent circuit , amplifier , exponential function , electronic engineering , power (physics) , electric power transmission , line (geometry) , rf power amplifier , engineering , transmission (telecommunications) , electrical engineering , topology (electrical circuits) , mathematics , physics , voltage , mathematical analysis , geometry , cmos , quantum mechanics
Abstract A model combining transmission line modeling (TLM) and exponential switching resistance (ESR) of active devices is introduced in the equivalent circuit to simulate the real performance of the reactively loaded power amplifier. Using the TLM, the distributed circuit parameters can be controlled by the time step size, and the collector efficiency can be more accurately evaluated by introducing the ESR into the equivalent circuit. The TLM together with the ESR element provides a simple algorithm to be implemented, and is favorable for optimization of high‐efficiency performance in the rf range. © 1993 John Wiley & sons, Inc.