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Photodetector modeling for optical receivers integrated in a silicon process
Author(s) -
Khalil R.,
Roulston D. J.,
Parker J. R.,
Hamel J. S.,
McGregor J. M.
Publication year - 1993
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650060210
Subject(s) - photodiode , optical link , optoelectronics , diode , electronic engineering , detector , optical fiber , photodetector , silicon , multipole expansion , integrated circuit , materials science , engineering , computer science , optics , electrical engineering , physics , quantum mechanics
A new photodiode model for circuit simulation has been developed for use in feasibility and performance studies on silicon integrated fiber‐optical detector systems. The model includes optical absorption and signal current generation from three regions: surface layer, space charge layer, and substrate. This article describes the diode model and includes simulation results for an integrated silicon fiberoptic detector system with ECL outputs, useful for optical interconnect applications such as on‐board clock distribution. Results are included for both the diode itself, showing its multipole response and the complete circuit. © 1993 John Wiley & sons, Inc.