Premium
Circuit model of low‐frequency transconductance and output resistance dispersion in ion‐implanted InP JFETs
Author(s) -
Kruppa W.,
Boos J. B.
Publication year - 1993
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650060121
Subject(s) - transconductance , jfet , preamplifier , materials science , equivalent circuit , dispersion (optics) , electrical engineering , optoelectronics , electronic circuit , electronic engineering , physics , engineering , transistor , field effect transistor , voltage , optics , amplifier , cmos
An equivalent circuit which simulates the low‐frequency dispersion in the transconductance and the output resistance of an ion‐implanted InP JFET is presented. The dispersion consists of reductions in the transconductance and the output resistance occurring between 100 Hz and 1 MHz and involves two dominant time constants in each parameter. The equivalent circuit can be used for the design of monolithic fiber‐optic receiver preamplifiers and other small‐signal circuits. © 1993 John Wiley & sons, Inc.