Accurate noise characterization of short gate length GaAs mesfets and hemts for use in low‐noise optical receivers | Zendy

Greaves S. D. | Zendy; Unwin R. T. | Zendy

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Accurate noise characterization of short gate length GaAs mesfets and hemts for use in low‐noise optical receivers

Author(s) -

Greaves S. D.,

Unwin R. T.

Publication year - 1993

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.4650060116

Subject(s) - noise (video) , electronic engineering , characterization (materials science) , noise figure , high electron mobility transistor , optoelectronics , electrical engineering , engineering , materials science , computer science , physics , transistor , optics , cmos , artificial intelligence , amplifier , voltage , image (mathematics)

Accurate noise characterization of MESFETs and HEMTs is required for the design of high‐frequency optical receivers. Here we consider a technique that extracts the intrinsic noise parameters P, R, C from measured noise data. Novel analytic expressions are presented as well as results that prove the validity of the technique. © 1993 John Wiley & sons, Inc.

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