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An analysis of the frequency limitations of an Al x GA 1‐x As/GaAs optical modulator
Author(s) -
TabibAzar M.,
Claspy P. C.,
Chorey C.,
Bhasin K. B.
Publication year - 1993
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650060106
Subject(s) - pockels effect , optical modulator , electro optic modulator , heterojunction , optoelectronics , semiconductor , materials science , optics , physics , phase modulation , laser , phase noise
Frequency response of an optical modulator, operating at λ = 0.83 μm and utilizing the linear electro‐optic (Pockels) effect in a Mach‐Zehnder configuration using an Al x Ga 1‐x As/Al y Ga 1‐y As double heterostructure, is analyzed. We show that in semiconductor modulators, electroabsorption should be taken into account in optimizing the frequency response of the device. © 1993 John Wiley & sons, Inc.