An analysis of the frequency limitations of an Al x  GA 1‐x As/GaAs optical modulator | Zendy

TabibAzar M. | Zendy; Claspy P. C. | Zendy; Chorey C. | Zendy; Bhasin K. B. | Zendy

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An analysis of the frequency limitations of an Al x GA 1‐x As/GaAs optical modulator

Author(s) -

TabibAzar M.,

Claspy P. C.,

Chorey C.,

Bhasin K. B.

Publication year - 1993

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.4650060106

Subject(s) - pockels effect , optical modulator , electro optic modulator , heterojunction , optoelectronics , semiconductor , materials science , optics , physics , phase modulation , laser , phase noise

Frequency response of an optical modulator, operating at λ = 0.83 μm and utilizing the linear electro‐optic (Pockels) effect in a Mach‐Zehnder configuration using an Al x Ga 1‐x As/Al y Ga 1‐y As double heterostructure, is analyzed. We show that in semiconductor modulators, electroabsorption should be taken into account in optimizing the frequency response of the device. © 1993 John Wiley & sons, Inc.

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