Premium
Modeling of gunn domain effects in the output conductance of the high‐frequency small‐signal GaAs MESFET equivalent circuit
Author(s) -
Magerko Mark A.,
Chang Kai
Publication year - 1992
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650051414
Subject(s) - mesfet , conductance , equivalent circuit , signal (programming language) , frequency domain , small signal model , materials science , optoelectronics , physics , transistor , electrical engineering , field effect transistor , condensed matter physics , engineering , mathematics , voltage , computer science , mathematical analysis , programming language
A time‐delay element associated with the output conductance has been included in the small‐signal GaAs MESFET equivalent circuit to model Gunn domain effects. From experimental data collected to 36 GHz, these effects primarily contribute to decrease of the output conductance (g ds ) with increasing frequency which significantly affects the magnitude of the S‐parameter S 22 . © 1992 John Wiley & Sons, Inc.