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Process‐induced lateral asymmetry of a Y junction
Author(s) -
Jeng JyhYuan,
Tsui ChingLong,
Wang WaySeen
Publication year - 1992
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650051211
Subject(s) - asymmetry , offset (computer science) , extinction ratio , optics , waveguide , radius , materials science , voltage , wavelength , physics , computer science , computer security , quantum mechanics , programming language
The influence of lateral asymmetry on the electro‐optic effect of a Ti:LiNbO 3 Y‐junction waveguide for integrated optical devices is investigated. The characteristic discrepancy of a Y junction related to the photolithographic process constraint is simulated. It is found that the half‐wave voltage will increase 50% if the width of waveguide is 4 μm and the branch angle is rounded by a circular shape with a radius of about 5 μm. Also, if the Y branch has a lateral offset of 2.5 μm with respect to the central axis of the input waveguide, the extinction ratio will decay to 5 dB. © 1992 John Wiley & Sons, Inc.