Process‐induced lateral asymmetry of a Y junction | Zendy

Jeng JyhYuan | Zendy; Tsui ChingLong | Zendy; Wang WaySeen | Zendy

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Process‐induced lateral asymmetry of a Y junction

Author(s) -

Jeng JyhYuan,

Tsui ChingLong,

Wang WaySeen

Publication year - 1992

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.4650051211

Subject(s) - asymmetry , offset (computer science) , extinction ratio , optics , waveguide , radius , materials science , voltage , wavelength , physics , computer science , computer security , quantum mechanics , programming language

The influence of lateral asymmetry on the electro‐optic effect of a Ti:LiNbO 3 Y‐junction waveguide for integrated optical devices is investigated. The characteristic discrepancy of a Y junction related to the photolithographic process constraint is simulated. It is found that the half‐wave voltage will increase 50% if the width of waveguide is 4 μm and the branch angle is rounded by a circular shape with a radius of about 5 μm. Also, if the Y branch has a lateral offset of 2.5 μm with respect to the central axis of the input waveguide, the extinction ratio will decay to 5 dB. © 1992 John Wiley & Sons, Inc.

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