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Effect of metallization process on the performance of passive microstripline circuits
Author(s) -
Puri Vijaya
Publication year - 1992
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650051112
Subject(s) - electroplating , materials science , plating (geology) , microwave , copper plating , optoelectronics , aluminium , copper , electronic circuit , conductor , composite material , electrical conductor , printed circuit board , coupling (piping) , microstrip , electronic engineering , metallurgy , electrical engineering , layer (electronics) , telecommunications , engineering , geophysics , geology
The coupling and isolation of a 10‐dB directional coupler, midband rejection of Δ/2 rejection filter, and transmission and reflection coefficients of microstriplines are studied in the X band (8–11 GHz). The circuits are delineated photolithographically on alumina substrates metallized by aluminum and copper using different metallization processes. The adhesion and dc resistivity are also compared. The microwave properties do not show appreciable differences due to the various metallizations, though dc ion plating + electroplating seems to be the best of the lot. It has also been found that aluminum under proper conditions of deposition proves to be as good a conductor for microwave purposes as copper, and in some cases better. It is felt that using ion plating initially to get a thickness of ∼2000 Å and then electroplating to 4 μn thickness will be very cost effective, the film having the advantages of the good adhesive property of ion plating and less wastage of costly pure material. © 1992 John Wiley & Sons, Inc.