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A technique for the large‐signal characterization of transistors
Author(s) -
Tsang Kim Fung,
Yip Peter C. L.,
Morgan Gwyn B.
Publication year - 1992
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650051013
Subject(s) - characterization (materials science) , transistor , nonlinear system , electronic engineering , signal (programming language) , materials science , electrical engineering , engineering , computer science , physics , nanotechnology , voltage , quantum mechanics , programming language
A novel method for the characterization of transistors operating in the nonlinear region has been developed. A new measurement method is proposed and the formulation for the characterization has been developed. Calculated results based on the proposed method are promising when compared to measured data. © 1992 John Wiley & Sons, Inc.