X‐band mmic voltage‐controlled oscillator using HEMTS | Zendy

Allamando Etienne André | Zendy

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X‐band mmic voltage‐controlled oscillator using HEMTS

Author(s) -

Allamando Etienne André

Publication year - 1992

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.4650050815

Subject(s) - transconductance , monolithic microwave integrated circuit , electrical engineering , capacitance , voltage , transistor , high electron mobility transistor , field effect transistor , optoelectronics , materials science , engineering , electronic engineering , physics , amplifier , cmos , electrode , quantum mechanics

An alternative approach for the design of a voltage‐controlled oscillator is proposed. It consists of using an appropriate field effect transistor which exhibits height value of constant transconductance and a high slope of gate capacitance. An MMIC realization using HEMTs is presented with experimental results obtained in X‐band. A minimum output power of 17 mW with a voltage tunable over a 17 percent bandwidth centered at 10.2 GHz is obtained. © 1992 John Wiley & Sons, Inc.

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