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X‐band mmic voltage‐controlled oscillator using HEMTS
Author(s) -
Allamando Etienne André
Publication year - 1992
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650050815
Subject(s) - transconductance , monolithic microwave integrated circuit , electrical engineering , capacitance , voltage , transistor , high electron mobility transistor , field effect transistor , optoelectronics , materials science , engineering , electronic engineering , physics , amplifier , cmos , electrode , quantum mechanics
An alternative approach for the design of a voltage‐controlled oscillator is proposed. It consists of using an appropriate field effect transistor which exhibits height value of constant transconductance and a high slope of gate capacitance. An MMIC realization using HEMTs is presented with experimental results obtained in X‐band. A minimum output power of 17 mW with a voltage tunable over a 17 percent bandwidth centered at 10.2 GHz is obtained. © 1992 John Wiley & Sons, Inc.