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Modulated‐impurity‐concentration transferred‐electron devices exhibiting large harmonic frequency content
Author(s) -
Jones Stephen H.,
Tait Gregory B.,
Shur Michael
Publication year - 1992
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650050804
Subject(s) - impurity , gunn diode , harmonic , oscillation (cell signaling) , diode , doping , waveform , materials science , electron , optoelectronics , modulation (music) , diffusion , power (physics) , electrical engineering , voltage , physics , chemistry , engineering , acoustics , biochemistry , quantum mechanics , thermodynamics
We report large increases in the harmonic components of the oscillation current waveforms for InP and GaAs TEDs by appropriate modulation of the device doping profile. The results are based on accurate drift‐diffusion simulations of Gunn‐diode structures. An unoptimized InP modulated‐impurity‐concentration transferred‐electron device demonstrated a 100% increase in second‐harmonic power generation as compared with its companion TED. © 1992 John Wiley & Sons, Inc.