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Photoconductors as dynamic memory elements
Author(s) -
McGinn V. P.,
Smith B. C.
Publication year - 1992
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650050504
Subject(s) - reactance , optoelectronics , resistive touchscreen , materials science , reduction (mathematics) , dynamic range , electrical engineering , electrical reactance , electronic engineering , computer science , engineering , inductance , voltage , geometry , mathematics
Industrial photoconductors are doped for large quantum yields. The resulting improvement in resistive dynamic range is accompanied by photocarrier traps. These traps enhance device hysterisis (or memory). The reduction in response speed mimics electrical reactance effects. This light history may be exploited in the construction of low‐frequency filters and oscillators.