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A novel mesfet‐compatible gaas optoelectronic switch
Author(s) -
Riesz Ferenc,
Szentpáli B.,
Gottwald P.,
NémethSallay M.
Publication year - 1992
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650050305
Subject(s) - mesfet , optoelectronics , materials science , etching (microfabrication) , photoconductivity , epitaxy , fabrication , monolithic microwave integrated circuit , gallium arsenide , layer (electronics) , electrical engineering , transistor , voltage , nanotechnology , field effect transistor , engineering , medicine , amplifier , alternative medicine , cmos , pathology
Photoconductive optoelectronic pulse‐forming switches have been fabricated from vapor‐phase epitaxially grown GaAs‐based layer structures. The fabrication process is compatible with the MESFET/MMIC technology. The light‐absorbing region is thinned by chemical etching, thus changing the actual carrier lifetime in this region. The switches showed off/on resistance ratios of about 500 even at about 0.1‐mW incident optical power. The pulse response of the devices is limited by the lifetime of charge carriers.