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High‐power microwave bipolar transistor modeling
Author(s) -
Asensio Alberto,
Pérez Félix
Publication year - 1992
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650050105
Subject(s) - microwave , bipolar junction transistor , transistor , transistor model , power semiconductor device , power (physics) , electronic engineering , electrical engineering , radar , thermal resistance , microwave power , thermal , materials science , engineering , optoelectronics , physics , telecommunications , voltage , quantum mechanics , meteorology
Abstract This article introduces a model for high‐power microwave bipolar transistors and its associated parameter‐measuring strategy, whose inclusion of thermal phenomena in the dc characterization allows a good estimate of the device's thermal resistance to be obtained. This type of model provides important capabilities for solid‐state radar transmitter design.