AIGaAs/GaAs power MISFET with 0.5 W/mm at 30 GHz | Zendy

Bonte B. | Zendy; Amairi A. | Zendy; Crosnier Y. | Zendy; Salmer G. | Zendy

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AIGaAs/GaAs power MISFET with 0.5 W/mm at 30 GHz

Author(s) -

Bonte B.,

Amairi A.,

Crosnier Y.,

Salmer G.

Publication year - 1991

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.4650040803

Subject(s) - misfet , extremely high frequency , materials science , electrical engineering , power (physics) , optoelectronics , voltage , range (aeronautics) , breakdown voltage , engineering , transistor , physics , field effect transistor , telecommunications , quantum mechanics , composite material

This article deals with the application of the AlGaAs‐GaAs DMT principle to the millimeter wave range. It is based on two technological realizations and related characterizations. An I dss of 700 mA/mm and a 10‐12‐V breakdown voltage are demonstrated. Power measurements indicate an output‐power capability of about 0.5 W/mm at 30 GHz.

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