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AIGaAs/GaAs power MISFET with 0.5 W/mm at 30 GHz
Author(s) -
Bonte B.,
Amairi A.,
Crosnier Y.,
Salmer G.
Publication year - 1991
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650040803
Subject(s) - misfet , extremely high frequency , materials science , electrical engineering , power (physics) , optoelectronics , voltage , range (aeronautics) , breakdown voltage , engineering , transistor , physics , field effect transistor , telecommunications , quantum mechanics , composite material
This article deals with the application of the AlGaAs‐GaAs DMT principle to the millimeter wave range. It is based on two technological realizations and related characterizations. An I dss of 700 mA/mm and a 10‐12‐V breakdown voltage are demonstrated. Power measurements indicate an output‐power capability of about 0.5 W/mm at 30 GHz.