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High performance MESFET power amplifiers for high volume application in KA band
Author(s) -
Mondal J.,
Carlson D.,
Pulver C.,
Vickberg M.,
Geddes J.
Publication year - 1991
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650040802
Subject(s) - ka band , mesfet , monolithic microwave integrated circuit , amplifier , volume (thermodynamics) , power (physics) , electrical engineering , dbm , rf power amplifier , materials science , optoelectronics , engineering , transistor , physics , cmos , field effect transistor , voltage , quantum mechanics
A very repeatable MBE power MMIC process has been developed for low‐cost and high‐volume Ka‐band applications. The RF yield under power drive has reached more than 60%. The power out in a balanced configuration was 300 mW with 18% power added efficiency at 30 GHz.