High performance MESFET power amplifiers for high volume application in KA band | Zendy

Mondal J. | Zendy; Carlson D. | Zendy; Pulver C. | Zendy; Vickberg M. | Zendy; Geddes J. | Zendy

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High performance MESFET power amplifiers for high volume application in KA band

Author(s) -

Mondal J.,

Carlson D.,

Pulver C.,

Vickberg M.,

Geddes J.

Publication year - 1991

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.4650040802

Subject(s) - ka band , mesfet , monolithic microwave integrated circuit , amplifier , volume (thermodynamics) , power (physics) , electrical engineering , dbm , rf power amplifier , materials science , optoelectronics , engineering , transistor , physics , cmos , field effect transistor , voltage , quantum mechanics

A very repeatable MBE power MMIC process has been developed for low‐cost and high‐volume Ka‐band applications. The RF yield under power drive has reached more than 60%. The power out in a balanced configuration was 300 mW with 18% power added efficiency at 30 GHz.

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