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Finite element analysis of semiconductor laser arrays
Author(s) -
Zhao An Ping,
Cvetkovic Srba R.
Publication year - 1991
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650040702
Subject(s) - laser , optics , channel (broadcasting) , finite element method , semiconductor laser theory , refractive index , semiconductor , materials science , intensity (physics) , optoelectronics , physics , engineering , telecommunications , thermodynamics
This article presents the analysis of semiconductor laser arrays based on the finite element method, with emphasis on nonuniform structures where the channel width and/or refractive index can vary across the array. The results show that the variation of channel width will have the same effect on the near‐field intensity profile as the variation of channel refractive index. Based on this finding, a laser array structure devised to achieve a highly desirable uniform intensity distribution for the lowest‐order mode is also presented.