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III‐V monolithic resonant photoreceiver using local epitaxy and large lattice mismatch material
Author(s) -
Aboulhouda S.,
Vilcot J. P.,
Razeghi M.,
Decoster D.,
Francois M.,
Maricot S.,
Aboudou A.
Publication year - 1991
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650040602
Subject(s) - mesfet , photodetector , optoelectronics , materials science , preamplifier , photodiode , epitaxy , microwave , fabrication , silicon , resistor , photoresistor , transistor , cmos , amplifier , electrical engineering , field effect transistor , layer (electronics) , telecommunications , voltage , nanotechnology , engineering , medicine , alternative medicine , pathology
It is shown that local and large lattice mismatch epitaxies could be useful techniques for the fabrication of optoelectronic integrated circuits. As an example, we fabricated a monolithic resonant photoreceiver which associates a long‐wavelength metal‐semiconductor‐metal photodetector, a GaAs MESFET preamplifier, and an inductor. The GaAs/GalnAs heteroepitaxy needed for the photodetector was selectively grown using a SiO 2 mask and the entire circuit was fabricated on a silicon substrate. Compared to a PIN photodiode loaded with a 50‐Ω resistor, more than 10 dB gain was measured at 7 GHz in a microwave optical link.
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