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Holographic photoelectro‐chemical etching of submicron gratings in n ‐InP for DFB/DBR lasers
Author(s) -
Wu Jie,
Liu Ruitang,
Lin Senmao
Publication year - 1991
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650040512
Subject(s) - biasing , etching (microfabrication) , holography , materials science , laser , optoelectronics , isotropic etching , optics , voltage , diffraction efficiency , diffraction , grating , nanotechnology , electrical engineering , physics , engineering , layer (electronics)
Second‐order diffraction gratings for 1.55‐μm DFB/DBR lasers have been formed by holographic photoelectrochemical (PEC) etching directly on n‐InP substrates with high uniformity and reproducibility. In particular, the dependence of PEC etching rate on the biasing voltage is investigated. The optimum biasing voltage is also given.