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Diode multipliers for submillimeter‐wave InAlAs/InGaAs heterostructure monolithic integrated circuits
Author(s) -
Kwon Y.,
Pavlidis D.
Publication year - 1991
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650040112
Subject(s) - high electron mobility transistor , terahertz radiation , optoelectronics , submillimeter wave , heterojunction , diode , electronic circuit , gallium arsenide , materials science , integrated circuit , multiplier (economics) , electrical engineering , millimeter , physics , transistor , optics , engineering , voltage , economics , macroeconomics
InAlAs/InGaAs heterostructures are studied as multiplier elements for submillimeter‐wave monolithic integrated circuits. The designs considered for this purpose are based on the principle of conventional HEMT, HEMT with n + bottom layer and a new proposed scheme of quantum‐confined modulated charge (QCMC). The QCMC diode is analyzed theoretically and experimentally showing its potential operation capability at 1.5 THz.