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Analysis of a gaussian model for the far‐field intensity pattern of laser diodes
Author(s) -
GhafouriShiraz H.,
Gong J.
Publication year - 1990
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650031113
Subject(s) - diode , optics , laser , intensity (physics) , gaussian , materials science , semiconductor laser theory , optoelectronics , near and far field , refractive index , laser diode , semiconductor , physics , quantum mechanics
Abstract A Gaussian model for the far‐field intensity pattern (FFIP) of semiconductor laser diodes is proposed based on a curve‐fitting technique. The analysis is carried out for different values of relative refractive index difference Δ and active layer thickness d ranging from 3% to 10% and 0.1 to 0.3 μm, respectively. The model is sufficiently accurate to be used in analyzing the coupling efficiency between laser diodes and single‐mode fibers.