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Influence of tem waves on dielectric encapsulated semiconductor devices
Author(s) -
Huang Kama,
Lin Weigan
Publication year - 1990
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650031106
Subject(s) - dielectric , semiconductor , materials science , transverse plane , optoelectronics , electromagnetic radiation , semiconductor device , electric field , electromagnetic field , acoustics , engineering physics , electrical engineering , optics , composite material , physics , engineering , structural engineering , layer (electronics) , quantum mechanics
The influence of transverse electromagnetic (TEM) waves on dielectric encapsulated semiconductor devices is not attracting engineers' attention. It is found that the parameters of dielectric encapsulated semiconductor devices may degrade when these devices are radiated by TEM waves even though they are open circuited. Our experimental data exhibit that parameter degradations depend on the electric field strength and radiation time. Some discussions on these results are also given in this article.