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Harmonic generation in II‐VI compound semiconductors under hot electron condition
Author(s) -
Dutta A.,
Mukhopadhyay D.
Publication year - 1990
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650031105
Subject(s) - semiconductor , electron , compound semiconductor , hot electron , electrical engineering , optoelectronics , materials science , engineering physics , atomic physics , engineering , physics , nanotechnology , quantum mechanics , epitaxy , layer (electronics)
The second harmonic generation efficiency has been calculated in a number of II‐VI‐compound semiconductors under high‐field condition by approximating the velocity‐field characteristics by a power‐series relation. It is found that the second harmonic generation efficiency is much higher in these materials than in the elemental or IIIV compound semiconductors. Also, because the carrier relaxation times are lower in these materials, they can be used for efficient harmonic power generation in the infrared‐ and millimeter‐wavelength ranges.