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Ka‐band monolithic GaAs mesfet amplifier design
Author(s) -
Rollman J. A.,
Wahid P. F.
Publication year - 1990
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650030802
Subject(s) - mesfet , amplifier , optoelectronics , materials science , electrical engineering , gallium arsenide , stage (stratigraphy) , electronic engineering , engineering , transistor , field effect transistor , voltage , cmos , geology , paleontology
Three designs, a single‐stage, a parallel‐stage, and a two‐stage amplifier, for medium power monolithic GaAs MESFET amplifiers at Ka‐band are presented. The results obtained are consistent with other performances reported at these frequencies.