Premium
Modeling and experimental study of breakdown mechanisms in multichannel AIGaAs/GaAs power hemts
Author(s) -
Temcamani Farid,
Crosnier Yves,
Lippens Didier,
Salmer Georges
Publication year - 1990
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650030603
Subject(s) - high electron mobility transistor , quantum tunnelling , impact ionization , optoelectronics , materials science , power (physics) , avalanche breakdown , engineering physics , breakdown voltage , ionization , electronic engineering , electrical engineering , engineering , physics , transistor , voltage , ion , quantum mechanics
A theoretical and experimental analysis of breakdown in the power HEMT AlGaAs/GaAs single or multiple wells is presented in this article. The two phenomena ionization and tunneling have been considered. The understanding of breakdown mechanisms has led to definition of structures particularly suitable for power applications.