Active devices for microwave distributed amplification

The theoretical results presented in this letter demonstrate the possibility of growing waves' propagation along MESFET electrodes, through a distributed interaction mechanism based on the active characteristics of the transistor. The analysis proves that a T cross‐section gate is necessary to obtain amplification, moreover this gate configuration allows a remarkable reduction of the electrode gate resistance. In the validity range of the analysis used, the main feature of the new device is a wide bandwidth, deriving from a fully distributed component. This device could result in a valid substitute for low power TWTs.