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Active devices for microwave distributed amplification
Author(s) -
D'Inzeo Guglielmo,
Giusto Roberto,
Petrachi Claudio
Publication year - 1990
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650030204
Subject(s) - mesfet , microwave , electronic engineering , bandwidth (computing) , transistor , optoelectronics , engineering , electrical engineering , computer science , materials science , field effect transistor , voltage , telecommunications
The theoretical results presented in this letter demonstrate the possibility of growing waves' propagation along MESFET electrodes, through a distributed interaction mechanism based on the active characteristics of the transistor. The analysis proves that a T cross‐section gate is necessary to obtain amplification, moreover this gate configuration allows a remarkable reduction of the electrode gate resistance. In the validity range of the analysis used, the main feature of the new device is a wide bandwidth, deriving from a fully distributed component. This device could result in a valid substitute for low power TWTs.