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Quasi‐tem spectral domain technique for multiconductor structures with rectangular and trapezoidal conductor cross sections
Author(s) -
Kollipara R. T.,
Tripathi V. K.
Publication year - 1990
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650030103
Subject(s) - conductor , electrical conductor , dielectric , finite element method , materials science , mathematical analysis , boundary (topology) , geometry , mathematics , structural engineering , composite material , engineering , optoelectronics
An efficient technique based on the quasi‐TEM spectral domain analysis is formulated to compute the characteristic parameters of multiconductor‐multilayered structures with finite thickness conductors having trapezoidal and rectangular cross sections. Computed results for typical single and coupled lines on alumina and GaAs substrates are presented and compared with results based on finite and boundary element techniques and measured data for the effective dielectric constant.