Dual gate mesfet for flat microwave response of directly modulated laser diode | Zendy

Rocco M. T. M. | Zendy; de Salles A. A. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Dual gate mesfet for flat microwave response of directly modulated laser diode

Author(s) -

Rocco M. T. M.,

de Salles A. A.

Publication year - 1989

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.4650021204

Subject(s) - mesfet , optoelectronics , microwave , diode , laser diode , materials science , flatness (cosmology) , frequency response , laser , semiconductor laser theory , transistor , field effect transistor , optics , electrical engineering , voltage , physics , engineering , telecommunications , cosmology , quantum mechanics

A dual gate GaAs MESFET (DG‐FET) driver is designed to obtain a flat frequency response from a direct intensity modulated semiconductor laser diode. The DG‐FET input and output matching circuits are designed to compensate the laser diode intrinsic frequency response in a band from 0.3 to 2.0 GHz. A frequency response flatness improvement of more than 15 dB is obtained.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research