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Dual gate mesfet for flat microwave response of directly modulated laser diode
Author(s) -
Rocco M. T. M.,
de Salles A. A.
Publication year - 1989
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650021204
Subject(s) - mesfet , optoelectronics , microwave , diode , laser diode , materials science , flatness (cosmology) , frequency response , laser , semiconductor laser theory , transistor , field effect transistor , optics , electrical engineering , voltage , physics , engineering , telecommunications , cosmology , quantum mechanics
A dual gate GaAs MESFET (DG‐FET) driver is designed to obtain a flat frequency response from a direct intensity modulated semiconductor laser diode. The DG‐FET input and output matching circuits are designed to compensate the laser diode intrinsic frequency response in a band from 0.3 to 2.0 GHz. A frequency response flatness improvement of more than 15 dB is obtained.