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Optically controlled subsystems at HF and at MM‐wavelengths
Author(s) -
Rosen A.,
Stabile P.,
Janton W.,
Gombar A.,
Delmaster J.,
Basile P.,
Hurwitz R.
Publication year - 1989
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650021103
Subject(s) - attenuator (electronics) , insertion loss , materials science , pin diode , optoelectronics , optical attenuator , diode , wavelength , voltage , optics , electrical engineering , physics , attenuation , optical fiber , engineering , multi mode optical fiber
This paper describes the use of optically controlled devices at HF (2‐30) (MHz) in a narrow band antenna coupler using high voltage PIN diodes as switching devices and at 60 GHz as an attenuator / switch. PIN devices tested in an rf circuit between 2.5 and 30 MHz yielded isolation between 28 and 49 dB in the off state and insertion losses as low as 0.1 dB when illuminated with 180 W of optical power. Measurements made at 60 GHz have shown a 0.9 dB insertion loss in the on state and an isolation value of better than 21 dB in the off state.