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Experimental Study of the Microwave Impedance of Resonant Tunneling Diodes
Author(s) -
Lippens Didler,
Vanksien Olivier
Publication year - 1989
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650020703
Subject(s) - microwave , capacitance , diode , quantum tunnelling , electrical impedance , equivalent circuit , materials science , optoelectronics , resonant tunneling diode , negative impedance converter , conductance , biasing , range (aeronautics) , current (fluid) , condensed matter physics , electrical engineering , physics , voltage , optics , engineering , electrode , voltage source , quantum mechanics , laser , quantum well , composite material
The microwave impedance of high current Al 0.3 Ga 0.7 As‐GaAs‐Al 0.3 Ga 0.7 As resonant tunneling diodes is measured from 0.1 to 12.1 GHz over a large bias range at 300 K. Using an equivalent circuit model, the bias dependence of intrinsic conductance and capacitance suffice to explain the pronounced variations of impedance.