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Desktop computer models for cad of coplanar lines laid on semiconductor layers with dielectric cap layer
Author(s) -
Delrue R.,
Seguinot C.,
Pribetich P.,
Kennis P.
Publication year - 1989
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650020512
Subject(s) - semiconductor , dielectric , cad , layer (electronics) , matching (statistics) , materials science , coplanar waveguide , optoelectronics , line (geometry) , back end of line , electronic engineering , mode (computer interface) , microwave , engineering , computer science , engineering drawing , telecommunications , composite material , mathematics , geometry , statistics , operating system
For CAD simulation, it is necessary to determine the frequency behavior of coplanar lines laid on semiconductor substrates. Exact analyses can be performed using numerical techniques such as SDA or mode matching. However such analyses cannot be included in CA D programs. For this purpose, we present an original model for coplanar lines laid on semiconductor substrates, which takes into account both the influence of thickness metallization and dielectric cap layer. The validity of our model is tested by comparison with mode‐matching and SDA results. The influence of metallic losses is quantified and taken into account for micronic structures.