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Optically excited microwave ring resonators in gallium arsenide
Author(s) -
McGregor Douglas S.,
Park Chang Soo,
Weichold Mark H.,
Taylor Henry F.,
Chang Kai
Publication year - 1989
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650020505
Subject(s) - materials science , resonator , optoelectronics , gallium arsenide , microwave , electroplating , microstrip , harmonic , monolithic microwave integrated circuit , optics , layer (electronics) , physics , acoustics , telecommunications , engineering , amplifier , cmos , composite material
Microstrip ring resonators with fundamental frequencies near 3.5 GHz have been fabricated in semi‐insulating GaAs using an electroplating technique for conductor deposition. Test signals were coupled into the resonators by focusing modulated light into a photoconductive microstripline gap. Loaded Q‐factors measured for one of the rings with optical excitation ranged from 54 at the fundamental frequency to 103 at the third harmonic.