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High‐efficiency variable‐power class‐B dual‐gate power fets
Author(s) -
Bahl Inder,
Geissberger Art,
Griffin Edward
Publication year - 1989
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650020503
Subject(s) - materials science , power (physics) , electrical engineering , optoelectronics , dual (grammatical number) , channel (broadcasting) , class (philosophy) , engineering , computer science , physics , art , literature , quantum mechanics , artificial intelligence
We report state‐of‐the‐art measured performance of class‐B dual‐gate GaAs power FETs fabricated using a highly manufacturable SAG technology. The class‐B devices use selective co‐implantation for FET channel formation and demonstrate 640 mW / mm (for 2.5 mm FETs) of power at C‐band with 45% PAE and 11.4‐dB gain.
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