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Millimeter‐wave in 0.17 Ga 0.83 as power mesfets on GaAs(100) substrates
Author(s) -
Shih H. D.,
Kim B.,
Bradshaw K.,
Tserng H. Q.,
Wurtele M.,
Duncan W. M.,
Moore T. M.
Publication year - 1989
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650020502
Subject(s) - materials science , transconductance , high electron mobility transistor , microwave , optoelectronics , cathodoluminescence , molecular beam epitaxy , doping , scanning electron microscope , gallium arsenide , cutoff frequency , epitaxy , power gain , layer (electronics) , transistor , electrical engineering , nanotechnology , cmos , amplifier , physics , quantum mechanics , voltage , composite material , luminescence , engineering
In 0.17 Ga 0.83 As MESFETs were grown on GaAs(100) substrates by molecular beam epitaxy (MBE). The structure comprised an undoped, In 0.17 Ga 0.83 As buffer layer grown directly on GaAs and an In 0.17 Ga 0.83 As active layer doped to 5 × 10 + 17 cm −3 . The defect structure was characterized by cathodoluminescence (CL) in a scanning electron microscope. FETs with 0.25‐μm gate length and 50‐μm gate width were fabricated using a standard processing technique. Excellent dc and microwave performance characteristics were obtained. The best device showed a transconductance (g m ) of 400 mS / mm and a current‐gain cutoff frequency (f T ) of 75 GHz. At 60 GHz, it delivered a power density of 0.50 W / mm with a gain of 4 dB and a power‐added efficiency of 20%, indicating its superior performance over a standard AIGaAs / GaAs HEMT.