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Microwave response of a hemt photoconductive detector
Author(s) -
Claspy P. C.,
Bhasin K. B.
Publication year - 1989
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650020102
Subject(s) - high electron mobility transistor , mesfet , photoconductivity , microwave , optoelectronics , detector , materials science , bandwidth (computing) , frequency response , optics , electrical engineering , physics , transistor , engineering , telecommunications , voltage , field effect transistor
Interdigitated photoconductive detectors with 5‐μm geometry have been fabricated on HEMT material and their optical response characteristics at 820 nm have been examined at DC and in the frequency range of 2‐8 GHz. These have been compared with characteristics of similar 1‐μm devices on MESFET material. The shapes of the frequency responses were found to differ, but the useful bandwidth of both types of devices was found to be similar.