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On spot sizes of 1.3 ‐1.55‐μm InGaAsP/InP semiconductor laser diodes
Author(s) -
GhafooriShiraz H.
Publication year - 1988
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650010609
Subject(s) - diode , optoelectronics , materials science , laser , perpendicular , semiconductor , optics , semiconductor laser theory , coupling (piping) , refractive index , laser diode , physics , geometry , mathematics , metallurgy
Abstract The spot sizes for the fundamental TE modes of InGaAsP / InP laser diodes in directions parallel and perpendicular to the junction plane have been investigated based on the effective refractive index approach. The analytical results are in good agreement with the reported measured values in the literature. The results can be used to calculate the coupling efficiency between laser diodes and single‐mode fibers.