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Monolithically integrated coplanar 75‐GHz silicon impatt oscillator
Author(s) -
Luy J. F.,
Strohm K. M.,
Buechler J.
Publication year - 1988
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650010402
Subject(s) - impatt diode , optoelectronics , materials science , silicon , resonator , diode , planar , molecular beam epitaxy , electrical engineering , epitaxy , engineering , nanotechnology , computer graphics (images) , layer (electronics) , computer science
Planar IMPATT diodes have been fabricated for W‐band operation on high‐resistivity silicon substrates. The active layers are grown by silicon molecular beam epitaxy. The diodes are monolithically integrated in a coplanar disc resonator. Good DC characteristics have been achieved. Oscillations have been detected at a frequency of 76 GHz with a continuous wave output power of about 1 mW.