Premium
N‐way MMIC redundant switch
Author(s) -
Bahl Inder J.,
Griffin Edward L.,
Willems David A.
Publication year - 1988
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650010311
Subject(s) - monolithic microwave integrated circuit , mesfet , insertion loss , crossover switch , return loss , rf switch , electrical engineering , redundancy (engineering) , shunt (medical) , microwave , electronic engineering , engineering , analogue switch , computer science , transistor , limit switch , field effect transistor , voltage , telecommunications , cmos , radio frequency , reliability engineering , medicine , amplifier , cardiology , antenna (radio)
A novel approach to provide redundancy in an N‐way MESFET switch has been invented and realized with monolithic microwave integrated circuit technology. This switch circuit uses series and shunt FETs configured in a manner to prevent failure of the switch even if several FETs fail. For example, a SPDT redundant switch is capable of providing 1.3‐dB insertion loss and return loss and isolation better than 20 and 35 dB, respectively, over dc to 12 GHz, even if 25% of the FETs fail in each arm.