Premium
Contact effects in InP near‐micron transferred electron devices
Author(s) -
Czekaj J.,
Shaw M. P.,
Grubin H. L.
Publication year - 1988
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650010209
Subject(s) - materials science , cathode , electron , optoelectronics , voltage , current (fluid) , boltzmann equation , diffusion , bandwidth (computing) , signal (programming language) , computational physics , electrical engineering , physics , engineering , computer science , quantum mechanics , thermodynamics , programming language , telecommunications
We have performed an experimental and numerical investigation of near‐micron sized InP transferred electron devices having alloyed metal cathode “current‐limiting” contacts. Both a Boltzmann transport equation (BTE) and drift and diffusion analysis were used to simulate the dc and ac results. Both techniques were capable of predicting the dc and amplification characteristics, but only the BTE approach predicted the narrow large‐signal oscillatory bandwidth observed in the experiments. We found that: The devices behaved in a transit time oscillatory mode; subtle differences in contact conditions caused major change in device output frequency, power, and efficiency; the temperature dependence of the current‐voltage characteristic is a strong indicator of the potential device performance.