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Study of mesfets on P ‐substrates and on thin P ‐layers
Author(s) -
ElGhazaly Samir,
Itoh Tatsuo,
Salmer George
Publication year - 1988
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650010113
Subject(s) - mesfet , substrate (aquarium) , layer (electronics) , materials science , doping , optoelectronics , active layer , current (fluid) , thin film , electronic engineering , nanotechnology , electrical engineering , transistor , thin film transistor , field effect transistor , engineering , voltage , oceanography , geology
The effect of doping of the P‐substrate on the performance of the submicron‐gate MESFET is simulated using a two‐dimensional computer model. It is observed that though increasing the substrate doping results in a better carrier confinement to the active layer, it reduces the drain current. To overcome this problem, a thin fully depleted P‐layer can be introduced between the active layer and the semiinsulating substrate.