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An improved small signal model of InP HBT for millimeter‐wave applications
Author(s) -
Zhang Ao,
Gao Jianjun
Publication year - 2021
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.32876
Subject(s) - heterojunction bipolar transistor , small signal model , bipolar junction transistor , equivalent circuit , extremely high frequency , signal (programming language) , millimeter , heterojunction , large signal model , range (aeronautics) , optoelectronics , heterostructure emitter bipolar transistor , electronic engineering , electrical engineering , transistor , materials science , physics , engineering , computer science , telecommunications , voltage , optics , power (physics) , quantum mechanics , composite material , programming language
Abstract In this letter, an improved small‐signal equivalent circuit model of InP heterojunction bipolar transistors (HBTs) for millimeter‐wave applications is presented. The proposed small‐signal model takes into account the parasitic effect in the collector part which can effectively improve the accuracy of S parameter. In the frequency range of 2–110 GHz, good agreements between the measured and model‐calculated data can be achieved to demonstrate good modeling accuracy.